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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN2106MFV,L3XHF(CT
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RN2106MFV,L3XHF(CT

Manufacturer Part Number RN2106MFV,L3XHF(CT
Manufacturer Toshiba Semiconductor and Storage
Detailed Description AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER
Package VESM
In Stock 1642197 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.124 $0.102 $0.054 $0.036 $0.024 $0.022
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Transistor Type PNP - Pre-Biased
Supplier Device Package VESM
Series Automotive, AEC-Q101
Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 4.7 kOhms
Power - Max 150 mW
Product Attribute Attribute Value
Package / Case SOT-723
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 250 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100 mA
Base Product Number RN2106

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RN2106MFV,L3XHF(CT Datasheet PDF