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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN2105MFV,L3F
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RN2105MFV,L3F

Manufacturer Part Number RN2105MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Detailed Description TRANS PREBIAS PNP 50V 0.1A VESM
Package VESM
In Stock 5842 pcs
Data sheet
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Transistor Type PNP - Pre-Biased
Supplier Device Package VESM
Series -
Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 2.2 kOhms
Power - Max 150 mW
Product Attribute Attribute Value
Package / Case SOT-723
Package Tape & Reel (TR)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100 mA
Base Product Number RN2105

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RN2105MFV,L3F Datasheet PDF