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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > MT3S111TU,LF
Toshiba Semiconductor and Storage

MT3S111TU,LF

Manufacturer Part Number MT3S111TU,LF
Manufacturer Toshiba Semiconductor and Storage
Detailed Description RF SIGE NPN BIPOLAR TRANSISTOR N
Package UFM
In Stock 462121 pcs
Data sheet
Reference Price (In US Dollars)
1 10 25 100 250 500 1000
$0.236 $0.209 $0.189 $0.165 $0.145 $0.128 $0.101
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 6V
Transistor Type NPN
Supplier Device Package UFM
Series -
Power - Max 800mW
Package / Case 3-SMD, Flat Lead
Package Tape & Reel (TR)
Operating Temperature 150°C (TJ)
Product Attribute Attribute Value
Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Mounting Type Surface Mount
Gain 12.5dB
Frequency - Transition 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Current - Collector (Ic) (Max) 100mA
Base Product Number MT3S111

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MT3S111TU,LF Datasheet PDF