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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > MT3S111P(TE12L,F)
Toshiba Semiconductor and Storage

MT3S111P(TE12L,F)

Manufacturer Part Number MT3S111P(TE12L,F)
Manufacturer Toshiba Semiconductor and Storage
Detailed Description RF TRANS NPN 6V 8GHZ PW-MINI
Package PW-MINI
In Stock 249263 pcs
Data sheet
Reference Price (In US Dollars)
1000 2000
$0.139 $0.137
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 6V
Transistor Type NPN
Supplier Device Package PW-MINI
Series -
Power - Max 1W
Package / Case TO-243AA
Package Tape & Reel (TR)
Operating Temperature 150°C (TJ)
Product Attribute Attribute Value
Noise Figure (dB Typ @ f) 1.25dB @ 1GHz
Mounting Type Surface Mount
Gain 10.5dB
Frequency - Transition 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Current - Collector (Ic) (Max) 100mA
Base Product Number MT3S111

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MT3S111P(TE12L,F) Datasheet PDF