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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > G3S12010C
Global Power Technology-GPT

G3S12010C

Manufacturer Part Number G3S12010C
Manufacturer Global Power Technology-GPT
Detailed Description DIODE SIL CARB 1.2KV 33.2A TO252
Package TO-252
In Stock 9041 pcs
Data sheet G3S12010C
Reference Price (In US Dollars)
1 10
$4.446 $4.084
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Specifications

Product Attribute Attribute Value
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max) 1200 V
Technology SiC (Silicon Carbide) Schottky
Supplier Device Package TO-252
Speed No Recovery Time > 500mA (Io)
Series -
Reverse Recovery Time (trr) 0 ns
Product Attribute Attribute Value
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Cut Tape (CT)
Operating Temperature - Junction -55°C ~ 175°C
Mounting Type Surface Mount
Current - Reverse Leakage @ Vr 50 µA @ 1200 V
Current - Average Rectified (Io) 33.2A
Capacitance @ Vr, F 765pF @ 0V, 1MHz

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G3S12010C Datasheet PDF

Data sheet

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