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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > G3S12003H
Global Power Technology-GPT

G3S12003H

Manufacturer Part Number G3S12003H
Manufacturer Global Power Technology-GPT
Detailed Description DIODE SIL CARB 1.2KV 9A TO220F
Package TO-220F
In Stock 26292 pcs
Data sheet G3S12003H
Reference Price (In US Dollars)
1 10
$1.592 $1.43
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Specifications

Product Attribute Attribute Value
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max) 1200 V
Technology SiC (Silicon Carbide) Schottky
Supplier Device Package TO-220F
Speed No Recovery Time > 500mA (Io)
Series -
Reverse Recovery Time (trr) 0 ns
Product Attribute Attribute Value
Package / Case TO-220-2 Full Pack
Package Cut Tape (CT)
Operating Temperature - Junction -55°C ~ 175°C
Mounting Type Through Hole
Current - Reverse Leakage @ Vr 100 µA @ 1200 V
Current - Average Rectified (Io) 9A
Capacitance @ Vr, F 260pF @ 0V, 1MHz

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G3S12003H Datasheet PDF

Data sheet

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