Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4.9V @ 1mA
Vgs (Max)
+22V, -10V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
H2PAK-7
Series
-
Rds On (Max) @ Id, Vgs
30mOhm @ 50A, 18V
Power Dissipation (Max)
469W (Tc)
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
3540 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 18 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
18V
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
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