SCTH50N120-7
Reference Price (In US Dollars)
1
10
25
$14.37
$13.252
$12.656
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
5.1V @ 1mA
Vgs (Max)
+22V, -10V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
H2PAK-7
Series
-
Rds On (Max) @ Id, Vgs
69mOhm @ 40A, 20V
Power Dissipation (Max)
270W (Tc)
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs
122 nC @ 20 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
20V
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
65A
Base Product Number
SCTH50
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SCTH50N120-7 Datasheet PDF
Data sheet
Datasheet File Browse
