SCT30N120H
Reference Price (In US Dollars)
1
10
25
100
250
500
$8.736
$8.056
$7.694
$6.88
$6.563
$6.405
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3.5V @ 1mA
Vgs (Max)
+25V, -10V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
H2Pak-2
Series
-
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Power Dissipation (Max)
270W (Tc)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 200°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 20 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
20V
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Base Product Number
SCT30
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Data sheet
Datasheet File Browse