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SCT30N120
Reference Price (In US Dollars)
1
10
100
500
$9.745
$8.988
$7.675
$6.968
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.6V @ 1mA (Typ)
Vgs (Max)
+25V, -10V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
HiP247™
Series
-
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Power Dissipation (Max)
270W (Tc)
Package / Case
TO-247-3
Package
Tube
Operating Temperature
-55°C ~ 200°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 20 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
20V
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Base Product Number
SCT30
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Data sheet
Datasheet File Browse
