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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.15V @ 1mA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
LFPAK56, Power-SO8
Series
-
Rds On (Max) @ Id, Vgs
2mOhm @ 25A, 10V
Power Dissipation (Max)
272W (Tc)
Package / Case
SC-100, SOT-669
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
5217 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
87 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Base Product Number
PSMN2R0
Recommended Products
PSMN2R0-40YLDXMOSFET N-CH 40V 180A LFPAK56Nexperia USA Inc.
PSMN1R9-80SSEJAPPLICATION SPECIFIC POWER MOSFENexperia USA Inc.
