PSMN1R9-40YSDX
Reference Price (In US Dollars)
1
10
100
500
$0.887
$0.798
$0.641
$0.527
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3.6V @ 1mA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
LFPAK56, Power-SO8
Series
TrenchMOS™
Rds On (Max) @ Id, Vgs
1.9mOhm @ 25A, 10V
Power Dissipation (Max)
194W (Ta)
Package / Case
SC-100, SOT-669
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
6198 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
FET Type
N-Channel
FET Feature
Schottky Diode (Body)
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
200A (Ta)
Base Product Number
PSMN1R9
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PSMN1R9-40YSDX Datasheet PDF
Data sheet
Datasheet File Browse