Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3.6V @ 1mA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
LFPAK56, Power-SO8
Series
TrenchMOS™
Rds On (Max) @ Id, Vgs
1.5mOhm @ 25A, 10V
Power Dissipation (Max)
238W (Ta)
Package / Case
SC-100, SOT-669
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
7752 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs
99 nC @ 10 V
FET Type
N-Channel
FET Feature
Schottky Diode (Body)
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
240A (Ta)
Base Product Number
PSMN1R5
Recommended Products
PSMN1R5-30BLEJMOSFET N-CH 30V 120A D2PAKNexperia USA Inc.
PSMN1R5-50YLHXPSMN1R5-50YLH/SOT1023/4 LEADSNexperia USA Inc.
