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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.2V @ 1mA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
LFPAK56, Power-SO8
Series
-
Rds On (Max) @ Id, Vgs
1.4mOhm @ 25A, 10V
Power Dissipation (Max)
238W (Tc)
Package / Case
SC-100, SOT-669
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
6661 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs
96 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Base Product Number
PSMN1R4
Recommended Products
PSMN1R5-30BLEJMOSFET N-CH 30V 120A D2PAKNexperia USA Inc.
