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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
1.25V @ 250µA
Vgs (Max)
±12V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-236AB
Series
Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs
57mOhm @ 3.4A, 8V
Power Dissipation (Max)
590mW (Ta), 5.6W (Tc)
Package / Case
TO-236-3, SC-59, SOT-23-3
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
296 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 4.5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 8V
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta)
Base Product Number
PMV50
Recommended Products
PMV55ENEA,2153.1A, 60V, N CHANNEL, SILICON, MNexperia USA Inc.