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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-236AB
Series
Automotive, AEC-Q100
Rds On (Max) @ Id, Vgs
45mOhm @ 4.2A, 10V
Power Dissipation (Max)
310mW (Ta), 455mW (Tc)
Package / Case
TO-236-3, SC-59, SOT-23-3
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
793 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
19.2 nC @ 10 V
FET Type
P-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)
Base Product Number
PMV50
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PMV50ENEA,2153.9A, 30V, N CHANNEL, SILICON, MNexperia USA Inc.
PMV50XNEARPMV50XNEA - 30 V, N-CHANNEL TRENNexperia USA Inc.
PMV52ENEARMOSFET N-CH 30V 3.2A TO236ABNexperia USA Inc.
PMV50EPEARPMV50EPEA - 30 V, P-CHANNEL TRENNXP USA Inc.
