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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > MIEB101H1200EH
IXYS

MIEB101H1200EH

Manufacturer Part Number MIEB101H1200EH
Manufacturer IXYS
Detailed Description IGBT MODULE 1200V 183A 630W E3
Package E3
In Stock 945 pcs
Data sheet MIEB101H1200EH
Reference Price (In US Dollars)
1 10
$52.436 $50.137
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
Supplier Device Package E3
Series -
Power - Max 630 W
Package / Case E3
Package Box
Operating Temperature -40°C ~ 125°C (TJ)
NTC Thermistor No
Product Attribute Attribute Value
Mounting Type Chassis Mount
Input Capacitance (Cies) @ Vce 7.43 nF @ 25 V
Input Standard
IGBT Type -
Current - Collector Cutoff (Max) 300 µA
Current - Collector (Ic) (Max) 183 A
Configuration Full Bridge Inverter
Base Product Number MIEB101

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MIEB101H1200EH Datasheet PDF

Data sheet