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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > MIEB100W1200TEH
IXYS

MIEB100W1200TEH

Manufacturer Part Number MIEB100W1200TEH
Manufacturer IXYS
Detailed Description IGBT MODULE 1200V 183A 630W E3
Package E3
In Stock 5716 pcs
Data sheet
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
Supplier Device Package E3
Series -
Power - Max 630 W
Package / Case E3
Package Box
Operating Temperature -40°C ~ 125°C (TJ)
NTC Thermistor Yes
Product Attribute Attribute Value
Mounting Type Chassis Mount
Input Capacitance (Cies) @ Vce 7.43 nF @ 25 V
Input Standard
IGBT Type -
Current - Collector Cutoff (Max) 300 µA
Current - Collector (Ic) (Max) 183 A
Configuration Three Phase Inverter
Base Product Number MIEB100

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MIEB100W1200TEH Datasheet PDF