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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXFH80N65X2
IXYS

IXFH80N65X2

Manufacturer Part Number IXFH80N65X2
Manufacturer IXYS
Detailed Description MOSFET N-CH 650V 80A TO247
Package TO-247 (IXTH)
In Stock 10796 pcs
Data sheet IXFx80N65X2 Datasheet
Reference Price (In US Dollars)
1 10 100 500 1000
$5.59 $5.136 $4.338 $3.859 $3.539
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 5.5V @ 4mA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247 (IXTH)
Series HiPerFET™, Ultra X2
Rds On (Max) @ Id, Vgs 40mOhm @ 40A, 10V
Power Dissipation (Max) 890W (Tc)
Package / Case TO-247-3
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 8245 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 143 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Base Product Number IXFH80

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IXFH80N65X2 Datasheet PDF

Data sheet