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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXFH7N100P
IXYS

IXFH7N100P

Manufacturer Part Number IXFH7N100P
Manufacturer IXYS
Detailed Description MOSFET N-CH 1000V 7A TO247
Package TO-247 (IXTH)
In Stock 14705 pcs
Data sheet IXF(A,P)7N100P
Reference Price (In US Dollars)
300
$2.994
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 6V @ 1mA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247 (IXTH)
Series HiPerFET™, Polar
Rds On (Max) @ Id, Vgs 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max) 300W (Tc)
Package / Case TO-247-3
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 2590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Base Product Number IXFH7

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IXFH7N100P Datasheet PDF

Data sheet