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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > G60N10K
Goford Semiconductor

G60N10K

Manufacturer Part Number G60N10K
Manufacturer Goford Semiconductor
Detailed Description N90V,60A,RD<25M@10V,VTH0.8V~2.5V
Package TO-252
In Stock 337260 pcs
Data sheet G60N10K
Reference Price (In US Dollars)
2500 15000 30000 50000
$0.127 $0.117 $0.105 $0.097
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-252
Series -
Rds On (Max) @ Id, Vgs 25mOhm @ 20A, 10V
Power Dissipation (Max) 56W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 4118 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 111 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 90 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)

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G60N10K Datasheet PDF

Data sheet