G60N10K
Manufacturer Part Number
G60N10K
Manufacturer
Goford Semiconductor
Detailed Description
N90V,60A,RD<25M@10V,VTH0.8V~2.5V
Package
TO-252
In Stock
337260 pcs
Data sheet
G60N10K
Reference Price (In US Dollars)
2500
15000
30000
50000
$0.127
$0.117
$0.105
$0.097
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.5V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-252
Series
-
Rds On (Max) @ Id, Vgs
25mOhm @ 20A, 10V
Power Dissipation (Max)
56W (Tc)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
4118 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
111 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
90 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
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Data sheet
Datasheet File Browse