G60N06T
Manufacturer Part Number
G60N06T
Manufacturer
Goford Semiconductor
Detailed Description
N60V, 50A,RD<17M@10V,VTH1.0V~2.0
Package
TO-220
In Stock
498219 pcs
Data sheet
G60N06T
Reference Price (In US Dollars)
3000
9000
15000
30000
51000
$0.1
$0.096
$0.092
$0.083
$0.077
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220
Series
-
Rds On (Max) @ Id, Vgs
17mOhm @ 5A, 10V
Power Dissipation (Max)
85W (Tc)
Package / Case
TO-220-3
Package
Tube
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
2050 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
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Data sheet
Datasheet File Browse