G58N06F
Manufacturer Part Number | G58N06F |
---|---|
Manufacturer | Goford Semiconductor |
Detailed Description | N60V, 35A,RD<13M@10V,VTH1.0V~2.4 |
Package | TO-220F |
In Stock | 6285 pcs |
Data sheet | G58N06F |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220F |
Series | G |
Rds On (Max) @ Id, Vgs | 13mOhm @ 30A, 10V |
Power Dissipation (Max) | 44W (Tc) |
Package / Case | TO-220-3 Full Pack |
Package | Tube |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 30006 pF @ 30 V |
Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
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