18N20J
Manufacturer Part Number
18N20J
Manufacturer
Goford Semiconductor
Detailed Description
N200V, 18A,RD<0.16@10V,VTH1V~3V,
Package
TO-251
In Stock
5350 pcs
Data sheet
18N20(J)
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3V @ 250µA
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-251
Series
-
Rds On (Max) @ Id, Vgs
160mOhm @ 9A, 10V
Power Dissipation (Max)
65.8W (Tc)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Package
Tube
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
836 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
17.7 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
18A (Tj)
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Data sheet
Datasheet File Browse
