18N20
Manufacturer Part Number
18N20
Manufacturer
Goford Semiconductor
Detailed Description
N 200V, RD(MAX)<0.16@10V,VTH1.0V
Package
TO-252
In Stock
346549 pcs
Data sheet
18N20(J)
Reference Price (In US Dollars)
2500
15000
30000
50000
$0.127
$0.118
$0.106
$0.098
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3V @ 250µA
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-252
Series
18N20
Rds On (Max) @ Id, Vgs
160mOhm @ 9A, 10V
Power Dissipation (Max)
65.8W (Tc)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
836 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
17.7 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
18A (Tj)
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Data sheet
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