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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > GB10SLT12-252
GeneSiC Semiconductor

GB10SLT12-252

Manufacturer Part Number GB10SLT12-252
Manufacturer GeneSiC Semiconductor
Detailed Description DIODE SIL CARB 1.2KV 10A TO252
Package TO-252
In Stock 4343 pcs
Data sheet DK OBS NOTICEGB10SLT12-252 Datasheet
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Forward (Vf) (Max) @ If 2 V @ 10 A
Voltage - DC Reverse (Vr) (Max) 1200 V
Technology SiC (Silicon Carbide) Schottky
Supplier Device Package TO-252
Speed No Recovery Time > 500mA (Io)
Series -
Reverse Recovery Time (trr) 0 ns
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Attribute Attribute Value
Package Tube
Operating Temperature - Junction -55°C ~ 175°C
Mounting Type Surface Mount
Current - Reverse Leakage @ Vr 250 µA @ 1200 V
Current - Average Rectified (Io) 10A
Capacitance @ Vr, F 520pF @ 1V, 1MHz
Base Product Number GB10SLT12

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GB10SLT12-252 Datasheet PDF

Data sheet