GB10SLT12-220
Manufacturer Part Number | GB10SLT12-220 |
---|---|
Manufacturer | GeneSiC Semiconductor |
Detailed Description | DIODE SIL CARB 1.2KV 10A TO220-2 |
Package | TO-220-2 |
In Stock | 6862 pcs |
Data sheet |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
Voltage - DC Reverse (Vr) (Max) | 1200 V |
Technology | SiC (Silicon Carbide) Schottky |
Supplier Device Package | TO-220-2 |
Speed | No Recovery Time > 500mA (Io) |
Series | - |
Reverse Recovery Time (trr) | 0 ns |
Package / Case | TO-220-2 |
Product Attribute | Attribute Value |
---|---|
Package | Tube |
Operating Temperature - Junction | -55°C ~ 175°C |
Mounting Type | Through Hole |
Current - Reverse Leakage @ Vr | 40 µA @ 1200 V |
Current - Average Rectified (Io) | 10A |
Capacitance @ Vr, F | 520pF @ 1V, 1MHz |
Base Product Number | GB10SLT12 |
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