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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > 2N7000,126
NXP Semiconductors / Freescale

2N7000,126

Manufacturer Part Number 2N7000,126
Manufacturer NXP Semiconductors / Freescale
Detailed Description MOSFET N-CH 60V 300MA TO-92
Package TO-92-3
In Stock 6406 pcs
Data sheet 2N7000 Datasheet
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2V @ 1mA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-92-3
Series TrenchMOS™
Rds On (Max) @ Id, Vgs 5 Ohm @ 500mA, 10V
Power Dissipation (Max) 830mW (Ta)
Packaging Tape & Box (TB)
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Other Names 2N7000 AMO
2N7000 AMO-ND
934003460126
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 60V
Detailed Description N-Channel 60V 300mA (Tc) 830mW (Ta) Through Hole TO-92-3
Current - Continuous Drain (Id) @ 25°C 300mA (Tc)

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2N7000,126 Datasheet PDF

Data sheet