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2N7000TA
Reference Price (In US Dollars)
1
10
100
500
1000
$0.132
$0.107
$0.073
$0.054
$0.041
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3V @ 1mA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-92-3
Series
-
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Power Dissipation (Max)
400mW (Ta)
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Package
Cut Tape (CT)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Tc)
Base Product Number
2N7000
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Data sheet
Datasheet File Browse
