FQT4N20LTF
| Manufacturer Part Number | FQT4N20LTF |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Detailed Description | POWER FIELD-EFFECT TRANSISTOR, 0 |
| Package | SOT-223-4 |
| In Stock | 6397 pcs |
| Data sheet |
Reference Price (In US Dollars)
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | SOT-223-4 |
| Series | QFET® |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 425mA, 10V |
| Power Dissipation (Max) | 2.2W (Tc) |
| Package / Case | TO-261-4, TO-261AA |
| Package | Bulk |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 5 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 850mA (Tc) |
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