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FQT1N80TF-WS
Reference Price (In US Dollars)
1
10
100
500
1000
2000
$0.376
$0.331
$0.254
$0.2
$0.16
$0.145
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
5V @ 250µA
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
SOT-223-3
Series
QFET®
Rds On (Max) @ Id, Vgs
20Ohm @ 100mA, 10V
Power Dissipation (Max)
2.1W (Tc)
Package / Case
TO-261-3
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
7.2 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
200mA (Tc)
Base Product Number
FQT1N80
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FQT1N80TF-WS Datasheet PDF
Data sheet
Datasheet File Browse
