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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > SIGC121T60NR2CX1SA2
Infineon Technologies

SIGC121T60NR2CX1SA2

Manufacturer Part Number SIGC121T60NR2CX1SA2
Manufacturer Infineon Technologies
Detailed Description IGBT 3 CHIP 600V WAFER
Package Die
In Stock 6484 pcs
Data sheet Mult Dev EOL 24/Sep/2019SIGC121T60NR2C
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 150A
Test Condition 300V, 150A, 1.5Ohm, 15V
Td (on/off) @ 25°C 125ns/225ns
Switching Energy -
Supplier Device Package Die
Series -
Package / Case Die
Product Attribute Attribute Value
Package Bulk
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Type Standard
IGBT Type NPT
Current - Collector Pulsed (Icm) 450 A
Current - Collector (Ic) (Max) 150 A
Base Product Number SIGC121

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SIGC121T60NR2CX1SA2 Datasheet PDF

Data sheet