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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > SIGC109T120R3
Infineon Technologies

SIGC109T120R3

Manufacturer Part Number SIGC109T120R3
Manufacturer Infineon Technologies
Detailed Description INSULATED GATE BIPOLAR TRANSISTO
Package Die
In Stock 10048 pcs
Data sheet
Reference Price (In US Dollars)
28
$4.198
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Test Condition -
Td (on/off) @ 25°C -
Switching Energy -
Supplier Device Package Die
Series -
Package / Case Die
Product Attribute Attribute Value
Package Bulk
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Type Standard
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 300 A
Base Product Number SIGC109

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SIGC109T120R3 Datasheet PDF