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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFSL4310PBF
Infineon Technologies

IRFSL4310PBF

Manufacturer Part Number IRFSL4310PBF
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 100V 130A TO262
Package TO-262
In Stock 5406 pcs
Data sheet Mult Device Standard Label Chg 29/Sep/2017Barcode Label Update 24/Feb/2017Mult Device EOL 11/May/2016Mult Dev EOL 15/May/2016Backend Wafer Transfer 23/Oct/2013IR Part Numbering SystemCopper Plating Update 31/Aug/2015
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-262
Series HEXFET®
Rds On (Max) @ Id, Vgs 7mOhm @ 75A, 10V
Power Dissipation (Max) 300W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 7670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)

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IRFSL4310PBF Datasheet PDF

Data sheet

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