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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFSL3206PBF
Infineon Technologies

IRFSL3206PBF

Manufacturer Part Number IRFSL3206PBF
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 60V 120A TO262
Package TO-262
In Stock 68668 pcs
Data sheet Mult Dev Label Chgs 18/Feb/2020Mult Dev Label Chgs Aug/2020Mult Device Standard Label Chg 29/Sep/2017Mult Dev Label Chgs 8/Sep/2021Warehouse Transfer 29/Jul/2015IR Part Numbering System
Reference Price (In US Dollars)
1 10 100 500 1000 2000 5000
$1.198 $1.077 $0.883 $0.751 $0.634 $0.602 $0.579
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 150µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-262
Series HEXFET®
Rds On (Max) @ Id, Vgs 3mOhm @ 75A, 10V
Power Dissipation (Max) 300W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 6540 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Base Product Number IRFSL3206

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IRFSL3206PBF Datasheet PDF

Data sheet