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IRF7353D2TRPBF
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
1V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
8-SO
Series
FETKY™
Rds On (Max) @ Id, Vgs
29mOhm @ 5.8A, 10V
Power Dissipation (Max)
2W (Ta)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
FET Type
N-Channel
FET Feature
Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Ta)
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IRF7353D2TRPBF Datasheet PDF
Data sheet
Datasheet File Browse
