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IRF7342PBF
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
1V @ 250µA
Technology
MOSFET (Metal Oxide)
Supplier Device Package
8-SO
Series
HEXFET®
Rds On (Max) @ Id, Vgs
105mOhm @ 3.4A, 10V
Power - Max
2W
Package / Case
8-SOIC (0.154", 3.90mm Width)
Package
Tube
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
690pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
38nC @ 10V
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25°C
3.4A
Configuration
2 P-Channel (Dual)
Base Product Number
IRF734
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Data sheet
Datasheet File Browse