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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF6709S2TR1PBF
Infineon Technologies

IRF6709S2TR1PBF

Manufacturer Part Number IRF6709S2TR1PBF
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 25V 12A DIRECTFET
Package DirectFET™ Isometric S1
In Stock 4089 pcs
Data sheet IRF6709S2TR(1)PbFMultiple Devices 20/Dec/2013IR Part Numbering SystemDirectFET Backend Wafer Processing 23/Oct/2013
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.35V @ 25µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package DirectFET™ Isometric S1
Series HEXFET®
Rds On (Max) @ Id, Vgs 7.8mOhm @ 12A, 10V
Power Dissipation (Max) 1.8W (Ta), 21W (Tc)
Package / Case DirectFET™ Isometric S1
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1010 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 39A (Tc)

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