IRF6706S2TRPBF
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.35V @ 25µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
DirectFET™ Isometric S1
Series
HEXFET®
Rds On (Max) @ Id, Vgs
3.8mOhm @ 17A, 10V
Power Dissipation (Max)
1.8W (Ta), 26W (Tc)
Package / Case
DirectFET™ Isometric S1
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
1810 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 4.5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
17A (Ta), 63A (Tc)
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IRF6706S2TRPBF Datasheet PDF
Data sheet
Datasheet File Browse