IRF6613TR1PBF
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.25V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
DIRECTFET™ MT
Series
HEXFET®
Rds On (Max) @ Id, Vgs
3.4mOhm @ 23A, 10V
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Package / Case
DirectFET™ Isometric MT
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
5950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 4.5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 150A (Tc)
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IRF6613TR1PBF Datasheet PDF
Data sheet
Datasheet File Browse