IRF6610TR1PBF
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.55V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
DIRECTFET™ SQ
Series
HEXFET®
Rds On (Max) @ Id, Vgs
6.8mOhm @ 15A, 10V
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)
Package / Case
DirectFET™ Isometric SQ
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
1520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 4.5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
15A (Ta), 66A (Tc)
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IRF6610TR1PBF Datasheet PDF
Data sheet
Datasheet File Browse