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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF3711L
Infineon Technologies

IRF3711L

Manufacturer Part Number IRF3711L
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 20V 110A TO262
Package TO-262
In Stock 6616 pcs
Data sheet IR Part Numbering SystemEOL122B 02/Oct/2007
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-262
Series HEXFET®
Rds On (Max) @ Id, Vgs 6mOhm @ 15A, 10V
Power Dissipation (Max) 3.1W (Ta), 120W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 2980 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 4.5 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)

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IRF3711L Datasheet PDF

Data sheet