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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF3710ZGPBF
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IRF3710ZGPBF

Manufacturer Part Number IRF3710ZGPBF
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 100V 59A TO220AB
Package TO-220AB
In Stock 5663 pcs
Data sheet IRF3710ZGPBFBackend Wafer Transfer 23/Oct/2013IR Part Numbering SystemMultiple Devices 05/Nov/2013
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250mA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB
Series HEXFET®
Rds On (Max) @ Id, Vgs 18mOhm @ 35A, 10V
Power Dissipation (Max) 160W (Tc)
Package / Case TO-220-3
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 59A (Tc)

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IRF3710ZGPBF Datasheet PDF

Data sheet

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