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IRF200B211
Reference Price (In US Dollars)
1
10
100
500
1000
2000
5000
10000
$0.405
$0.361
$0.281
$0.232
$0.184
$0.171
$0.163
$0.157
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4.9V @ 50µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220AB
Series
HEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs
170mOhm @ 7.2A, 10V
Power Dissipation (Max)
80W (Tc)
Package / Case
TO-220-3
Package
Tube
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Base Product Number
IRF200
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Data sheet
Datasheet File Browse
