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IRF1902PBF
Reference Price (In US Dollars)
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
700mV @ 250µA
Vgs (Max)
±12V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
8-SO
Series
HEXFET®
Rds On (Max) @ Id, Vgs
85mOhm @ 4A, 4.5V
Power Dissipation (Max)
2.5W (Ta)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Package
Tube
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
310 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 4.5 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)
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Data sheet
Datasheet File Browse