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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF1902PBF
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IRF1902PBF

Manufacturer Part Number IRF1902PBF
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 20V 4.2A 8SO
Package 8-SO
In Stock 4586 pcs
Data sheet IR Part Numbering SystemMultiple Devices 25/Apr/2014
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 700mV @ 250µA
Vgs (Max) ±12V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO
Series HEXFET®
Rds On (Max) @ Id, Vgs 85mOhm @ 4A, 4.5V
Power Dissipation (Max) 2.5W (Ta)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 4.5 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta)

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IRF1902PBF Datasheet PDF

Data sheet