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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPT022N10NF2SATMA1
Infineon Technologies

IPT022N10NF2SATMA1

Manufacturer Part Number IPT022N10NF2SATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET
Package PG-HSOF-8
In Stock 34654 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100 500
$2.091 $1.878 $1.539 $1.31
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.8V @ 169µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-HSOF-8
Series StrongIRFET™ 2
Rds On (Max) @ Id, Vgs 2.25mOhm @ 150A, 10V
Power Dissipation (Max) 3.8W (Ta), 250W (Tc)
Package / Case 8-PowerSFN
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 7300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 236A (Tc)

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IPT022N10NF2SATMA1 Datasheet PDF