IPT012N08NF2SATMA1
Manufacturer Part Number | IPT012N08NF2SATMA1 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | MOSFET |
Package | PG-HSOF-8 |
In Stock | 24800 pcs |
Data sheet |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 |
---|---|---|---|
$2.132 | $1.916 | $1.57 | $1.337 |
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Infineon Technologies series electronic components. We have 24800 pieces of Infineon Technologies IPT012N08NF2SATMA1 in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
RFQ Email: info@Components-House.net
RFQ Email: info@Components-House.net
Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 3.8V @ 267µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-HSOF-8 |
Series | StrongIRFET™ 2 |
Rds On (Max) @ Id, Vgs | 1.23mOhm @ 150A, 10V |
Power Dissipation (Max) | 3.8W (Ta), 300W (Tc) |
Package / Case | 8-PowerSFN |
Package | Tape & Reel (TR) |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 40 V |
Gate Charge (Qg) (Max) @ Vgs | 255 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Drain to Source Voltage (Vdss) | 80 V |
Current - Continuous Drain (Id) @ 25°C | 39A (Ta), 351A (Tc) |
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