IPP65R225C7
Manufacturer Part Number | IPP65R225C7 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | POWER FIELD-EFFECT TRANSISTOR, 1 |
Package | PG-TO220-3-1 |
In Stock | 4602 pcs |
Data sheet |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4V @ 240µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO220-3-1 |
Series | CoolMOS™ |
Rds On (Max) @ Id, Vgs | 225mOhm @ 4.8A, 10V |
Power Dissipation (Max) | 63W (Tc) |
Package / Case | TO-220-3 |
Package | Bulk |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 996 pF @ 400 V |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
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