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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPP65R190CFD7XKSA1
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IPP65R190CFD7XKSA1

Manufacturer Part Number IPP65R190CFD7XKSA1
Manufacturer Infineon Technologies
Detailed Description HIGH POWER_NEW
Package PG-TO220-3
In Stock 58724 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100 500 1000 2000 5000
$1.287 $1.155 $0.947 $0.806 $0.68 $0.646 $0.621
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4.5V @ 700µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO220-3
Series CoolMOS™ CFD7
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
Power Dissipation (Max) 151W (Tc)
Package / Case TO-220-3
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 17.5A (Tc)
Base Product Number IPP65R

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IPP65R190CFD7XKSA1 Datasheet PDF