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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > IPG20N06S2L50ATMA1
Infineon Technologies

IPG20N06S2L50ATMA1

Manufacturer Part Number IPG20N06S2L50ATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET 2N-CH 55V 20A 8TDSON
Package PG-TDSON-8-4
In Stock 189951 pcs
Data sheet Part Number GuideMult Dev Reel Design Chg 2/Dec/2019Mult Dev Pkg Box Chg 3/Jan/2018Wafer Test Add 27/Apr/2017
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.423 $0.378 $0.294 $0.243 $0.192 $0.179
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2V @ 19µA
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TDSON-8-4
Series OptiMOS™
Rds On (Max) @ Id, Vgs 50mOhm @ 15A, 10V
Power - Max 51W
Package / Case 8-PowerVDFN
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 20A
Configuration 2 N-Channel (Dual)
Base Product Number IPG20N

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IPG20N06S2L50ATMA1 Datasheet PDF

Data sheet